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Journal Articles

Formation of carbon alloys by low-energy ion doping and its application for adsorptive desulfurization

Shimoyama, Iwao

Hoshasen To Sangyo, (141), p.7 - 11, 2016/12

Desulfurization is an indispensable process on hydrogen formation from fossil fuel. Adsorptive desulfurization, alternative to conventional hydrogenation desulfurization, requires development of stable activated carbon adsorbents with high performance. I study dopant dependence on thiophene adsorption for carbon alloys prepared by heteroatom doping using low-energy ion beam. I doped nitrogen and phosphorus as dopants of group 15 elements in graphite surfaces, and clarified that phosphorus is superior in thiophene adsorption to nitrogen, and that the effect of phosphorus is higher with room temperature doping than with high temperature doping by about 10 times. X-ray absorption spectroscopy indicated that local structures around phosphorus sites were different between them. I attribute the high adsorption property to formation of curved phosphorus sites prepared by room temperature doping. Above results suggest that the property of carbon alloy can be controlled by low-energy ion beam.

Oral presentation

Functional carbon alloys formed by hetero atom dopings

Shimoyama, Iwao; Baba, Yuji; Hakoda, Teruyuki; Hirao, Norie; Shimada, Akihiko

no journal, , 

no abstracts in English

Oral presentation

Improvement of desulfurization properties of $$pi$$-conjugated carbon materials by phosphorus doping

Shimoyama, Iwao; Baba, Yuji

no journal, , 

Thiophene adsorption property on graphite was studied to clarify influence of N and P dopings for the application of adsorptive desulfurization of carbon alloys. An Ar $$^{+}$$-irradiated sample was also prepare to compare the influence of radiation damage, and all the samples were exposed to thiophene gas with saturated condition after ion beam doping. Thiophene coverages were estimated from XPS, and thiophene adsorption abilities obtained from the coverage and dopant density showed P-doped sample had larger value than N-doped sample by about 20 times. And room temperature doping showed larger adsorption ability than high-temperature doping for P-doped samples by about 10 times. We have clarified that planar P sites were preferentially formed by high-temperature doping and curved P sites were preferentially formed by room-temperature doping. This suggests that curved P sites have higher adsorption property than planar P sites. We compared these experimental results with theoretical results of minimum energy path analysis using molecular orbital calculations, and confirmed influence of P doping for the improvement of thiophene adsorption property.

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